摘要：本課程先對IC製程之清洗製程問題與挑戰做介紹，講解基本晶圓清洗製程步驟中面對之挑戰；接著，從清洗製程設備探討製程挑戰之解決對策；然後，探討C晶圓清洗製程之基本化學反應；進而，介紹IC製程中各種特殊關鍵之濕式蝕刻製程，接著，深入淺出介紹各種IC前段及後段(電晶體閘極前後)製程中之晶圓清洗步驟；接著探討65奈米以下IC晶圓清洗製程步驟面對之挑戰，最後，歸納總結晶圓清洗製程未來技術發方向。適合大專以上理工科系之畢業生、具有基礎物理、普通化學基礎、欲進入或從事半導體製程產業之人士參加。

大綱：
1. Fundamental of Surface Cleaning Technology
2. Challenge and Solution of Particle Removal
- defect adhesion vs. removal (scrubber, megasonic, hydrodynamics, aerosl etc.)
3. Cleaning Process Equipments
- tool, monitor, non-conventional cleaning
- wafer rinse/ dry technology- the deep trench application
4. Fundamental and Application of Wet Chemistries
- APM, HF/ BOE-- surface condition and water mark etc.
5. Wet Etching Processes:
- selective oxide/ nitride etch; poly, dielectric and metal stripper etc.
6. Applications of FEOL Wet Processes
- HPM, SPM, pre-furnace clean—impact of roughness on electrical characteristics
- Post implement/ etch PR strip—surface condition, Salicide selective etch
7. Application of BEOL Post Ash Cleaning
- Solvent base PAC / Dilute acid PAC- galvanic effect and metal corrosion etc.
8. Challenges and Solution of nm Devices Cleaning Processes
- Fragile/ HAR patterns- STI/ gate, spacer, contact/via clean
- high K/ metal gate, MUG/ FIN FET, mobility engineering etc.
9. Summary

- 新聞稿有效日期，至2009/03/24為止

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